? 2006 ixys all rights reserved g = gate d = drain s = source tab = drain ds99324e(03/06) polarhv tm power mosfet v dss = 600 v i d25 = 18 a r ds(on) 420 m n-channel enhancement mode avalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-3p (ixtq) g d s symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 30 v, v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 420 m pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m 600 v v gs continuous 30 v v gsm tranisent 40 v i d25 t c = 25 c18a i dm t c = 25 c, pulse width limited by t jm 54 a i ar t c = 25 c18a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 5 p d t c = 25 c 360 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-3p) 1.13/10 nm/lb.in. weight to-3p 6 g plus220 & plus220smd 4 g g s d plus220 (ixtv) g s plus220smd (ixtv...s) d (tab) ixtq 18n60p ixtv 18n60p ixtv 18n60ps d (tab) d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 18n60p ixtv 18n60p ixtv 18n60ps symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 9 16 s c iss 2500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 278 pf c rss 23 pf t d(on) 21 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 22 ns t d(off) r g = 5 (external) 62 ns t f 22 ns q g(on) 49 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 15 nc q gd 17 nc r thjc 0.35 c/w r thcs (to-3p, plus220) 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 18 a i sm repetitive 54 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 18a, -di/dt = 100 a/ s 500 ns v r = 100v ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 plus220smd (ixtv_s) outline to-3p (ixtq) outline plus220 (ixtv) outline
? 2006 ixys all rights reserved fig. 1. output characteristics @ 25 o c 0 2 4 6 8 10 12 14 16 18 01 23 456 78 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 2. output characteristics @ 125 o c 0 5 10 15 20 25 30 35 40 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 18a i d = 9a v gs = 10v fig. 6. drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 0 5 10 15 20 25 30 35 40 45 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 14 16 18 024681012141618 v d s - volts i d - amperes v gs = 10v 7v 6v 5v ixtq 18n60p ixtv 18n60p ixtv 18n60ps
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 18n60p ixtv 18n60p ixtv 18n60ps fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 q g - nanocoulombs v g s - volts v ds = 300v i d = 9a i g = 10ma fig. 7. input admittance 0 3 6 9 12 15 18 21 24 27 30 3.544.555.566.5 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 3 6 9 12 15 18 21 24 27 0 3 6 9 12 15 18 21 24 27 30 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 1 10 100 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25 s
? 2006 ixys all rights reserved ixtq 18n60p ixtv 18n60p ixtv 18n60ps fig. 13. maximum transient thermal resistance 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w
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